Abstract
A lithography system includes a light source producing a light beam directed to a mask located in a mask level and an optical demagnifier for demagnifying by a factor and focusing the beam. The light beam is focused on a converter element for converting the beam in a further beam having a smaller wavelength than UV light. The beam at the mask level has a transversal size smaller than the desired resolution at the object level multiplied by the demagnifying factor.
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