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An RF circuit module comprising a first RF semiconductor device 19 mounted within a cavity 4 surrounded by a wall 3 of a first dielectric circuit board 1, and a second RF semiconductor device 29 mounted to a second dielectric circuit board 2 placed on the wall 3. A metal base 11 is disposed on the first circuit board 1 and a number of embedded conductors 13 such as via holes are embedded within the wall 3 and arranged to surround the cavity 4 so that each having one end electrically connected to the metal base 11 and the other end exposed and arranged to surround the cavity 4. A metal cover 12 is sealingly attached to the first circuit board 1 to cover the second circuit board 2 and the second RF semiconductor device 29 and electrically connected at the upper surface of the wall 3. Therefore, the first and second RF semiconductor devices are electrically shielded and hermetically sealed, providing an RF circuit module of small-sized and high-performance. The metal cover may have a plate-like shape, the first circuit board may be a high-temperature burned circuit board and the second circuit board may be a low-temperature burned circuit board, the electrical connection between the first circuit board and the second circuit board may be made through a solder bump or an anisotropic conductive sheet. The metal base 11 may be exposed to the cavity, the first circuit board may have mounted thereon a transmission circuit and the second circuit board may have mounted thereon a reception circuit, and a high-frequency circuit device, which is not necessary to be hermetically sealed, may be mounted on the first circuit board outside of the metal cover.
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