US 6,335,561 B1 · Semiconductor device having a passivation film

Abstract

A semiconductor device comprises a semiconductor substrate having an area in which a circuit element is formed, and a passivation film formed on an upper surface of the semiconductor substrate, at least part of the passivation film being uneven shaped film, an upper surface of which is formed into an uneven shape independent of a shape of a lower surface of the passivation film layer.

Claims0

Dependent claims

Claims aren’t available for this document.

Facts

Application

09/233,422Filed 20 Jan 1999

Published

US 2001/0011761 A19 Aug 2001

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 74/137
The semiconductor body being only partially enclosed: the encapsulations being directly on the semiconductor body
H10W 40/226
Characterised by their shape, e.g. having conical or cylindrical projections: characterised by projecting parts, e.g. fins to increase surface area
H10W 42/60
Arrangements for protection of devices: protecting against electrostatic charges or discharges, e.g. Faraday shields
H10W 72/59
Bond wires: bond pads specially adapted therefor

Semiconductor device having a passivation film

Life of this patent

Abstract

Claims0

Semiconductor device having a passivation film

Life of this patent

Abstract

Claims0