US 6,335,555 B1 · Semiconductor device and a manufacturing method for the same

Abstract

A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

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Facts

Application

09/311,067Filed 13 May 1999

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6715
Characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes: characterised by the doping profiles, e.g.…

Semiconductor device and a manufacturing method for the same

Life of this patent

Abstract

Claims0

Semiconductor device and a manufacturing method for the same

Life of this patent

Abstract

Claims0