Epitaxial wafer for infrared light-emitting device and light-emitting device using the same

Abstract

The invention provides an epitaxial wafer including a first p-type layer; a p-type cladding layer; a p-type active layer; an n-type cladding layer; and a second n-type layer stacked on a p-type GaAs single-crystal substrate, wherein Zn is employed as a dopant in the first p-type layer; Ge is employed as a dopant in the p-type cladding layer and the p-type active layer; Te is employed as a dopant in the n-type cladding later and the second n-type layer; the average carrier concentration of the n-type cladding layer and the second n-type layer is 8×1017 cm−3 to 2×1018 cm−3; the n-type cladding layer has a thickness of 60-80 μm; the second n-type layer has a total concentration of Zn and Ge of 1×1017 atoms/cm3 or less; the dopant concentration of the portion in the second n-type layer within 3 μm of the interface between the n-type cladding layer and the second n-type layer is 3×1017 cm−3 or more; the Al compositional proportion in the n-type cladding layer or the second n-type layer is 0.10-0.35; the p-type active layer has a thickness of 0.5-1.2 μm; and the p-type active layer has an oxygen concentration of less than 3×1016 atoms/cm3. Epitaxial wafers for fabricating high-intensity and long-service-life GaAlAs infrared light-emitting devices are provided.

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