Polycrystalline silicon thin film transistor and manufacturing method thereof

Abstract

The present invention discloses a polycrystalline silicon thin film transistor connected to a gate line and a data line, including a source electrode contacting the data line; a gate electrode contacting the gate line; a drain electrode spaced apart from the source electrode; a polysilicon layer having upper and lower surfaces, the lower surface having a contacting area and a noncontacting area, the polysilicon layer being positioned between and contacting the source and the drain electrodes, and acting as a channel in which electrons flow; and a buffer layer positioned under the polysilicon layer, the buffer layer having a supporting portion, the supporting portion supporting the lower surface of the polysilicon layer through the contact area of the lower surface of the polysilicon layer, thereby forming a space between the buffer layer and the noncontacting area of the lower surface of the polysilicon layer.

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