US 6,335,541 B1 · Semiconductor thin film transistor with crystal orientation

Abstract

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

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Facts

Application

08/633,307Filed 15 Apr 1996

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10P 14/3806
Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth: using crystallisation-enhancing elements
H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/0323
Comprising silicon, e.g. amorphous silicon or polysilicon: comprising monocrystalline silicon

Semiconductor thin film transistor with crystal orientation

Life of this patent

Abstract

Claims0

Semiconductor thin film transistor with crystal orientation

Life of this patent

Abstract

Claims0