Method and apparatus for low voltage plasma doping using dual pulses

Abstract

A pulsed plasma doping system separates the plasma ignition function from the ion implantation function. An ignition voltage pulse is supplied to an ionizable gas and an implantation voltage pulse is applied to the target. The implantation voltage pulse can be generated from the ignition voltage pulse or can be generated separately from the ignition voltage pulse. Ions may be implanted in the target at an energy level that is below the Paschen curve for the system.

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