Electron microscopy sample having silicon nitride passivation layer

Abstract

A transmission electron microscopy (TEM) or scanning electron microscopy (SEM) sample preparation method includes the steps of depositing a metal layer on top of a substrate, depositing a silicon nitride passivation layer on top of the metal layer, and cutting the substrate and the metal and passivation layers to expose their cross-sections for examination by electron microscopy. As a result, a TEM/SEM sample having sharp, well-defined boundaries is produced.

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