US 6,335,290 B1 · Etching method, thin film transistor matrix substrate, and its manufacture

Abstract

In a method of etching an Al or Al alloy layer, an Al or Al alloy layer is formed on an underlying surface, the surface of the Al or Al alloy layer is processed with TMAH, a resist pattern is formed on the surface of the Al or Al alloy layer processed with TMAH, and by using the resist pattern as an etching mask, the Al or Al alloy layer is wet-etched.

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Facts

Application

09/277,791Filed 29 Mar 1999

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6715
Characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes: characterised by the doping profiles, e.g.…
H10D 30/6719
Characterised by the doping profiles, e.g. having lightly-doped source or drain extensions: having significant overlap between the lightly-doped…

Etching method, thin film transistor matrix substrate, and its manufacture

Life of this patent

Abstract

Claims0

Etching method, thin film transistor matrix substrate, and its manufacture

Life of this patent

Abstract

Claims0