Method for forming contact holes and semiconductor device fabricated using the same

Abstract

An insulating layer and a first silicon system layer are formed on a semiconductor substrate. An opening is formed in the first silicon system layer. A second silicon system layer is provided to cover the first silicon system layer and the opening. The second silicon system layer is etched to form a spacer on an inside wall of the opening so that the opening has a larger diameter at the top and a smaller diameter at the bottom. A protection layer is formed on the spacer; and the insulating layer is etched using the first silicon system layer, spacer and protection layer as a mask to form a contact hole therein.

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