Method for manufacturing semiconductor device and semiconductor device

Abstract

A semiconductor device has a plated heat sink layer on the back surface, preventing a short-circuit between a bonding wire and a first metal layer. A method of making a semiconductor device includes forming a catalyst layer on a bottom of a first separation groove in the front surface of a semiconductor substrate, forming a first metal layer selectively in the first separation groove by electroless plating, using the catalyst layer as a catalyst.

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