US 6,335,248 B1 · Dual workfunction MOSFETs with borderless diffusion contacts for high-performance embedded DRAM technology

Abstract

The present invention provides a method for forming dual workfunction metal oxide semiconductor field effect transistors (MOSFETs) which utilizes processing steps that solve the problem of doping the dual work function MOSFETs, while providing contacts to the diffusion regions which are borderless to the gate conductors. Specifically, the present invention provides a method wherein a self-aligned insulating gate cap is formed on top of a previously defined and doped gate conductor region. The inventive method which forms an insulating cap that is self-aligned to an underlying gate conductor enables the formation of dual workfunction gate conductors and borderless diffusion contacts without the need of employing separate block masks as required by prior art processes.

Claims0

Dependent claims

Claims aren’t available for this document.

Facts

Application

09/845,665Filed 30 Apr 2001

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10W 20/069
Of conductive parts of the interconnections: by forming self-aligned vias or self-aligned contact plugs
H10W 20/075
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: of multilayered…
H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…
H10W 20/097
By modifying materials of the dielectric parts: by thermally treating

Abstract

Facts

Application

09/845,665Filed 30 Apr 2001

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10W 20/069
Of conductive parts of the interconnections: by forming self-aligned vias or self-aligned contact plugs
H10W 20/075
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: of multilayered…
H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…
H10W 20/097
By modifying materials of the dielectric parts: by thermally treating

Dual workfunction MOSFETs with borderless diffusion contacts for high-performance embedded DRAM technology

Life of this patent

Abstract

Claims0

Dual workfunction MOSFETs with borderless diffusion contacts for high-performance embedded DRAM technology

Life of this patent

Abstract

Claims0