Manufacturing method of semiconductor device

Abstract

A manufacturing method of a semiconductor device obtaining performances respectively required in a MOS transistor in semiconductor memories and a MOS transistor in logic devices even in case of manufacturing a system LSI combining the semiconductor memories with the logic devices. Forming silicide films 7 in a logic device region 11 makes it possible to reduce the resistivity of diffusion regions 9 and a conductive film 4 of polysilicon or the like that will serve as an electrode of a resulting MOS transistor. Therefore, the semiconductor devices can be manufactured in which such the MOS transistor can be used as the MOS transistor in the logic devices that is required to operate at high speed and the MOS transistor is also formed in a DRAM or the like where miniaturization is required. Since no alternation is made of the structures of the respective MOS transistors, a semiconductor device whose performance is equivalent to that of the conventional counterpart can be manufactured.

Claims aren’t available for this document.