Method for fabricating a group III nitride semiconductor device

Abstract

A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1−x)1−y.InyN (0≦×≦1, 0≦y≦1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor AlzGa1−zN (0.7≦z≦1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.

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