Method for fabricating a semiconductor optical device having a ridge stripe

Abstract

A method for fabricating a semiconductor laser device includes the steps of patterning a first photoresist film on a top of a ridge stripe of a laser structure by using a second photoresist film as a mask. The first photoresist film is used for selectively etching an insulator film on the ridge stripe selectively from other portion on the side surfaces of the ridge stripe. The first photoresist film is of a negative image type having a viscosity of 50 centipoises.

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