US 6,333,946 B1Granted

Semiconductor laser device and process for manufacturing the same

AssigneeMitsubishi Denki Kabushiki Kaisha

InventorsMotoharu Miyashita, Harumi Nishiguchi, Akihiro Shima, Yuji Ohkura

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Abstract

A forward mesa ridge-embedded semiconductor laser device provides a high power output and includes a base portion of a forward mesa ridge having a narrow width to stabilize transverse mode oscillation and an upper cladding layer having a thickness sufficient to reduce loss of the laser beam, a top portion of the forward mesa ridge being interposed between parts of the current blocking layer to reduce the device resistance. The upper cladding layer includes a first cladding layer having the forward mesa ridge and a second cladding layer opposite the first cladding layer. The second cladding layer is deposited over the first cladding layer through the forward mesa ridge and a current blocking layer is positioned on both sides of the forward mesa ridge.

Claims9

Dependent claims

A semiconductor laser device comprising:

a semiconductor substrate having a first conductivity type and a surface in a crystallographic plane;
a lower cladding layer of the first conductivity type disposed on the surface of said semiconductor substrate;
an active layer disposed on said lower cladding layer;
a first upper cladding layer of a second conductivity type, disposed on said active layer, said first upper cladding layer including a first portion having a forward mesa ridge shape and a second portion extending along sides of a base of the first portion and thinner than the first portion;
a current blocking layer disposed on opposite sides of both the first and second portions of the first upper cladding layer;
and
a second upper cladding layer of the second conductivity type disposed on the first portion of said first upper cladding layer.

4 more elements

Dependencies are inferred from the claim text.