Nonvolatile semiconductor memory including a controller for providing an improved reprogram operation

A nonvolatile semiconductor memory device comprising:

• a plurality of data lines;
• a plurality of word lines;
• a plurality of memory cells each of which stores data, each of which has a threshold voltage corresponding to said data, and each of which is coupled to a corresponding word line and to a corresponding data line;
• a controller;
• and
• a data latch coupled to said plurality of data lines,
• wherein said controller controls a reprogram operation in which data stored in a portion of one sector are rewritten in response to one command supplied thereto,
• wherein said reprogram operation includes steps of:
• 1) selecting a word line from said plurality of word lines,
• 2) reading data of memory cells coupled to a word line selected in said step 1) to said data latch,
• 3) fetching program data for storing to memory cells corresponding from a first address to a second address supplied from outside to said data latch,
• 4) erasing data stored in said memory cells coupled to said word line selected in said step 1), and
• 5) programming said program data fetched in said data latch to said memory cells coupled to said word line selected in said step 1).

A nonvolatile semiconductor memory device comprising:

• a plurality of memory cells, each of which stores data and each of which has a threshold voltage corresponding to said data;
• a plurality of word lines, each of which connects to part of said plurality of memory cells;
• a controller;
• and
• a data latch,
• wherein said controller controls a reprogram operation in which data stored in a portion of one sector are rewritten, in response to one command supplied thereto,
• wherein said reprogram operation includes steps of:
• 1) selecting ones of said plurality of memory cells connected to one of said word lines,
• 2) reading data to said data latch from memory cells selected in said step 1),
• 3) fetching program data for storing to memory cells corresponding from a first address to a second address supplied from outside to said data latch,
• 4) erasing data stored in said memory cells selected in said step 1), and
• 5) programming said program data fetched in said data latch to said memory cells selected in said step 1).