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US 6,333,547 B1Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasayuki Tanaka, Shigehiko Saida, Yoshitaka Tsunashima
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Abstract
Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
Claims14
A semiconductor device, comprising a silicon nitride film containing chlorine in a concentration of at least 4×1020 cm−3.
A semiconductor device, comprising:
- an underlying region having a concave portion and formed on the side of a main surface of a semiconductor substrate;
- and
- a silicon oxide film containing chlorine and buried in the entire region of the concave portion formed in the underlying region;
- wherein said silicon oxide film contains at least 1×1019 cm−3 of chlorine.
1 more element
A semiconductor device, comprising:
- an underlying region having a concave portion and formed on the side of a main surface of a semiconductor substrate;
- and
- a silicon oxide film containing chlorine and buried in the entire region of the concave portion formed in the underlying region;
- wherein said silicon oxide film contains at least one of phosphorus and boron, and said silicon oxide film contains at least 1×1019 cm−3 of chlorine.
1 more element
Dependencies are inferred from the claim text.