Field-effect transistor with a buried mott material oxide channel
AssigneeInternational Business Machines Corporation
InventorsAlejandro G. Schrott, James A. Misewich, Bruce A. Scott
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Abstract
A structure and method of forming an integrated circuit (e.g., field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.
Claims21
An integrated circuit device comprising:
- a Mott transition channel layer over a substrate;
- an insulator layer over said Mott transition channel layer;
- source and drain contacts extending through said insulator layer, such that said source and drain contacts are electrically connected to said Mott transition channel layer;
- and
- a gate electrode over said insulator layer between said source and drain contacts.
A field effect transistor device comprising:
- a Mott transition channel layer over a substrate;
- an insulator layer over said Mott transition channel layer;
- source and drain contacts extending through said insulator layer, such that said source and drain contacts are electrically connected to said Mott transition channel layer;
- and
- a gate electrode over said insulator layer between said source and drain contacts.
An integrated circuit device having at least one field effect transistor, said field effect transistor comprising:
- a Mott transition channel layer over a substrate;
- an insulator layer over said Mott transition channel layer;
- source and drain contacts extending through said insulator layer, such that said source and drain contacts are electrically connected to said Mott transition channel layer;
- and
- a gate electrode over said insulator layer between said source and drain contacts.
Dependencies are inferred from the claim text.