MOSFET gate insulating films with oxynitride and oxide
AssigneeKabushiki Kaisha Toshiba
InventorsFumitomo Matsuoka, Minoru Takahashi
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Abstract
A semiconductor device where an interface circuit operating on a high power supply voltage and exchanging signals and data with an external device and an internal circuit operating on a low power supply voltage are integrated in a single chip. The interface circuit includes a transistor whose gate insulating film is made of SiO2. The internal circuit includes a transistor whose gate insulating film is made of an oxynitride film of nitrogen-added SiO2. Boron or BF2 has been introduced into the gate electrodes of the p-channel transistors among those whose gate insulating films have been made of an oxynitride film.
Claims9
A semiconductor device comprising:
- a first circuit which is integrated in a semiconductor chip and operates on a first voltage and which includes a first transistor whose gate insulating film is made of SiO2;
- and
- a second circuit which is integrated in said semiconductor chip and operates on a second voltage lower than said first voltage and which includes second transistors, each second transistor having a gate insulating film made of an oxynitride film, wherein a gate electrode of a p-channel transistor among said second transistors is made of a p-type conductivity material.
A semiconductor device integrated in a single chip and operating on a first power supply voltage and a second power supply voltage, comprising:
- an interface circuit which operates on said first power supply voltage and exchanges signals and data with an external device and which includes a first transistor whose gate insulating film is made of SiO2;
- and
- an internal circuit which operates on a second power supply voltage lower than said first power supply voltage and which includes second transistors, each second transistor having a gate insulating film made of an oxynitride film, wherein a gate electrode of a p-channel transistor among said second transistors is made of a p-type conductivity material.
A semiconductor device integrated in a semiconductor chip comprising:
- a first circuit operative on an external voltage, said first circuit including a first transistor having a gate insulating film made of SiO2;
- and
- a second circuit operative on an internal voltage less than the external voltage, said second circuit including second transistors, a second transistor having a gate insulating film made of an oxynitride film, wherein a gate electrode of a p-channel transistor among said second transistors is made of a p-type conductivity material.
Dependencies are inferred from the claim text.