Semiconductor device and method of fabricating
AssigneeOki Electric Industry Co., Ltd.
InventorShih-Chang Chen
Life of this patent
Estimating the term…
Abstract
A capacitor in a semiconductor device is constituted by a lower electrode having a laminated layer including an adhesive layer formed on an insulating film, a barrier layer formed so as to cover the upper surface of the insulating layer, a nitride side formed so as to cover the side face of the adhesive layer, and an electrode layer formed so as to cover the upper surface of the barrier layer, a capacitor insulating film formed so as to cover the upper surface and side surface of the lower electrode, and an upper electrode formed so as to cover the surface of the capacitor insulating film.
Claims25
A semiconductor device having a capacitor comprising:
- a lower electrode having a laminated layer including an adhesive layer formed on an insulating film, a nitride side formed so as to cover a side face of said adhesive layer, a barrier layer formed so as to cover an upper surface of said adhesive layer and said nitride side, and an electrode layer formed so as to cover an upper surface of said barrier layer;
- a capacitor insulating film formed so as to cover an upper surface and a side surface of said lower electrode;
- and
- an upper electrode formed so as to cover a surface of said capacitor insulating film.
A capacitor comprising:
- an adhesive layer formed on an insulating film;
- a nitride side formed on a side face of the adhesive layer;
- a barreier layer formed on an upper surface of the adhesive layer and an upper surface of the nitride side;
- an electrode layer formed on an upper surface of the barrier layer,
- the adhesive layer, the nitride side, the barrier layer and the electrode layer being a lower electrode of the capacitor;
- a capacitor insulating film formed to cover the lower electrode;
- and
- an upper electrode formed to cover the capacitor insulating film.
Dependencies are inferred from the claim text.