Semiconductor device having a capacitor exhibiting improved moisture resistance

A semiconductor device comprising an integrated circuit and a capacitor formed on the integrated circuit,

• said capacitor comprising a bottom electrode composed of a conductive layer formed on an insulating layer of the integrated circuit, a capacitor dielectric layer composed of one of a ferroelectric layer and dielectric layer having high permittivity formed on the bottom electrode, and a top electrode composed of a conductive layer formed on the capacitor dielectric layer,
• an interlayer insulating layer formed so as to cover said capacitor, said interlayer insulating layer having contact holes formed therein, said contact holes exposing said top electrode and said bottom electrode,
• interconnections formed in said contact holes and electrically coupled to said top electrode and said bottom electrode, and
• a passivation layer is formed to cover the interconnections,
• said interconnections include a first layer comprising titanium-tungsten,
• wherein a silicon nitride layer possessing an opening in the part correspondig to the top electrode of the capacitor is provided beneath the passivation layer.