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US 6,333,527 B2Granted
Semiconductor device and method for fabricating the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorJae Kap Kim
Life of this patent
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Abstract
A semiconductor device comprising a dual polysilicon gate structure in which the P type polysilicon gate is connected with the N type polysilicon gate by a bilayer conductive wiring structure without any contact, thereby significantly contributing to high integration, and a method for fabricating the semiconductor device such that the production yield is improved.
Claims2
A semiconductor device, comprising:
- a P well and an adjacent N well in a semiconductor substrate;
- an element isolating film formed on a predetermined area including the boundary between the P well and the N well;
- gate oxide layers formed on the P well and the N well;
- a dual polysilicon gate structure extending from a part of the P well through the element isolating film to a part of the N well, said dual polysilicon gate consisting of a P type gate electrode and an N type gate electrode, which are on the P well region and the N well region, respectively;
- and
- a conductive layer formed on the dual polysilicon gate structure and for interconnecting the P type gate electrode and the N type gate electrode.
3 more elements
Dependencies are inferred from the claim text.