Semiconductor apparatus process for production thereof and liquid crystal apparatus

A process for producing a semiconductor apparatus of the type comprising a semiconductor substrate, and a laminate structure formed on the semiconductor substrate including a principal electrode of semiconductor device, a laminate insulating layer and a conductor film disposed in this order on the semiconductor substrate, said principal electrode and said conductor film being electrically connected with each other through a contact hole formed within the laminate insulating layer;

• said process comprising the steps of:
• providing a semiconductor substrate having thereon a principal electrode,
• coating the semiconductor substrate with a first insulating layer,
• coating the first insulating layer with a second insulating layer and removing a portion of the second insulating layer to provide an aperture defining the contact hole,
• coating the second insulating layer with a third insulating layer,
• etching the third insulating layer into a desired pattern and the first insulating layer to provide an aperture, respectively by using the second insulating layer as an etching stopper layer so as to provide the first insulating layer with the aperture in self-alignment with the aperture of the second insulating layer,
• coating the first to third insulating layers with a conductor film to be electrically connected with the principal electrode, and
• surface processing the conductor film to provide the conductor film with a desired planar pattern.