Thin-film transistor and method of making same
AssigneeLG Electronics Inc.
InventorHyun-Sik Seo
Life of this patent
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Abstract
A thin-film transistor includes a substrate and a gate including a double-layered structure having first metal layer formed of a material exhibiting tensile stress and second metal layer formed of a metal exhibiting compressive stress, the first metal layer being wider than the second metal layer by about 1 to 4 μm. A method of making such a thin film transistor includes the steps of: depositing a first metal layer comprising a material exhibiting tensile stress on a substrate, depositing a second metal layer exhibiting compressive stress on the first metal layer; patterning the second metal layer and the first metal layer such that the first metal layer is wider than the second metal layer.
Claims31
A thin film transistor comprising:
- a substrate;
- and
- a gate including a double-layered structure having a first metal layer formed of a material including aluminum that exhibits a tensile stress and a second metal layer formed of a material exhibiting a compressive stress disposed on the substrate, wherein the tensile stress of the first metal layer and the compressive stress of the second metal layer combine to prevent a hillock from occurring at the gate;
- wherein the first metal layer is wider than the second metal layer by about 1 to 4 μm.
A thin film transistor comprising:
- a substrate;
- and
- a gate including a double-layered structure having a first metal layer and a second metal layer disposed on the substrate, the first metal layer being formed of a material including aluminum that exhibits tensile stress and a second metal layer being formed of a material exhibiting compressive stress, the tensile stress of the first metal layer and the compressive stress of the second metal layer being such that the combination of the tensile stress and the compressive stress prevents a hillock from occurring at the gate;
- wherein the first metal layer is wider than the second metal layer by about 1 to 4 μm.
Dependencies are inferred from the claim text.