Semiconductor device and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasazumi Matsuura
Life of this patent
Estimating the term…
Abstract
An interlayer insulating film of a semiconductor device is made of a material in which silicon atoms are main elements, and each of the silicon atoms has an oxygen bond and a carbon bond, and further at least some of the silicon atoms have a hydrogen bond. The interlayer insulating film is formed by chemical vapor deposition employing a mixed gas of hydrogen peroxide and a reactive gas having a gas molecular structure in which silicon atoms have a hydrogen bond and a carbon bond.
Claims3
A method of manufacturing a semiconductor device, comprising the step of forming an interlayer insulating film by chemical vapor deposition employing a mixed gas of hydrogen peroxide and a reactive gas having a gas molecular structure in which each silicon atom has at least a hydrogen bond and a carbon bond, the resultant interlayer insulating film having silicon atoms as main elements, substantially each of said silicon atoms having at least an oxygen bond and a carbon bond, and at least some of said silicon atoms having a hydrogen bond.
Dependencies are inferred from the claim text.