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US 6,333,276 B1Granted
Semiconductor device and method of forming semiconductor device
AssigneeNEC Corporation
InventorShirou Morinaga
Life of this patent
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Abstract
A semiconductor device according to the present invention includes insulating branches which are formed as an interlayer insulating film on a semiconductor substrate. The interlayer insulating film has holes (voids) between the branches to thereby reduce electrostatic capacitance between stacked layers within a semiconductor device.
Claims25
A method of forming a semiconductor device, comprising the steps of:
- forming growth nuclei on a first insulating film formed over a semiconductor substrate;
- forming insulating branches from said growth nuclei;
- and
- forming a second insulating film on upper ends of said insulating branches.
1 more element
A method of forming a semiconductor device comprising the steps of:
- forming a first wiring over a semiconductor substrate;
- forming a first insulating film so as to cover said first wiring;
- forming a plurality of growth nuclei on said first insulating film;
- growing a plurality of insulating branches from said growth nuclei by using said growth nuclei as a catalyst;
- forming a second insulating film isotropically at top end portions of said insulating branches.
2 more elements
Dependencies are inferred from the claim text.