Method and apparatus for dry etching
AssigneeHitachi, Ltd.
InventorsTakao Kumihashi, Kazunori Tsujimoto, Shinichi Tachi
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Abstract
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
Claims18
A method for manufacturing a semiconductor device having storage capacitors, comprising the following steps:
- providing a body which includes a semiconductor substrate having steps into a chamber;
- and
- etching the body in the chamber by using plasma of an etching gas, while exhausting the chamber by using at least one pump;
- wherein an effective exhaust speed of the chamber is not less than 600 liters/second;
- and
- wherein the effective exhaust speed is defined as follows:
- 1 / S = 1 / ∑ n Si + 1 / C
- where S is the effective exhaust speed,
- Si is an exhaust speed of one pump,
- n is the number of pumps, and
- C is an exhaust conductance of the chamber.
A method for manufacturing a semiconductor device having storage capacitors, comprising the following steps:
- providing a body which includes a semiconductor substrate having steps into a chamber;
- and
- etching the body in the chamber by using plasma of an etching gas, while exhausting the chamber;
- wherein an effective exhaust speed of the chamber is not less than 600 liters/second;
- and
- wherein a conductance of the chamber is not less than 2000 liters/second.
Dependencies are inferred from the claim text.