Multi-step plasma etch method for plasma etch processing a microelectronic layer

Abstract

A plasma etch method for plasma etch processing a microelectronic layer formed over a substrate, comprises a two step plasma etch method. Within a first step, the microelectronic layer is etched while employing a first plasma etch method employing a first detection apparatus optimized to measure a thickness of the microelectronic layer. The first detection apparatus controls the first plasma etch method to stop prior to reaching the substrate to thus form from the microelectronic layer a partially etched microelectronic layer. Within a second step, the partially etched microelectronic layer is etched while employing a second plasma etch method employing a second detection apparatus optimized to detect the substrate. The second detection apparatus controls the second etch method to stop on the substrate when etching the partially etched microelectronic layer to form a completely etched microelectronic layer. The method is particularly useful for forming gate electrodes for use within field effect transistors for use within semiconductor integrated circuit microelectronic fabrications.

Dependencies are inferred from the claim text.