Manufacturing process for a semiconductor device
AssigneeNEC Corporation
InventorSatoru Sugiyama
Life of this patent
Estimating the term…
Abstract
This invention relates to a manufacturing process for a semiconductor device, comprising injecting a silane compound and a dopant into a low-pressure chemical vapor deposition reactor to deposit a doped silicon film on a wafer; and at the end of the deposition, injecting an oxidizing gas to form an oxide film over the silicon film deposited in the reactor. According to this invention, anomalous growth or generation of foreign matters such as particles during a deposition step can be effectively minimized to improve a production yield and provide a high-quality and highly reliable semiconductor device.
Claims12
A manufacturing process for a semiconductor device, comprising:
- injecting a silane compound and a dopant into a low-pressure chemical vapor deposition reactor to deposit a doped silicon film on a wafer;
- at the end of the deposition, injecting an oxidizing gas to form an oxide film over the silicon film deposited in the reactor;
- and
- opening the reactor in the atmosphere to replace the wafer with a new one for a next batch of deposition after forming of the oxide film,
- wherein the low-pressure chemical vapor deposition reactor comprises a plurality of injectors for gases consisting of injectors not only for the silane compound but also for the dopant.
A manufacture process for a semiconductor device comprising:
- injecting a silane compound and a dopant into a low-pressure chemical vapor deposition reactor to deposit a doped silicon film on a wafer;
- and
- injecting an oxidizing gas before placing a wafer to form an oxide film over the silicon film deposited in the reactor in the previous batch,
- wherein the low-pressure chemical vapor deposition reactor comprises a plurality of injectors for gases consisting of injectors not only for the silane compound but also for the dopant,
- wherein at the end of the deposition step, the reactor and the injector lines are exhausted and replace with an inert gas before the oxidizing gas in injected.
Dependencies are inferred from the claim text.