US 6,333,260 B1 · Semiconductor device having improved metal line structure and manufacturing method therefor

Abstract

A semiconductor device having improved metal line structure has a first dielectric layer formed on a semiconductor substrate, a metal film pattern formed on the first dielectric layer, an interface protection layer on the metal film pattern, and a second dielectric layer on the interface protection layer, wherein the second dielectric layer contains a reactive material, e.g., fluorine, which is prevented by the interface protection layer from diffusing to the metal film pattern and reacting with the metal in the metal film pattern to form a damage film, e.g., metal fluoride, which is a highly resistive material that, if formed on the semiconductor device, would reduce the reliability of the metal film pattern and thus reduce the reliability of the semiconductor device as a whole.

Claims28

Dependent claims

A method of manufacturing a semiconductor device, comprising the steps of:

forming a first dielectric layer on a semiconductor substrate;
forming a metal film pattern on the first dielectric layer;
forming an interface protection layer of aluminum oxide, silicon nitride or silicon oxynitride on the metal film pattern to protect the metal film pattern from material degradation due to etching chemical interactions on the metal film pattern;
and
forming a second dielectric layer on the interface protection layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/339,375Filed 24 Jun 1999

Priority

KR 98-2392024 Jun 1998

Granted

25 Dec 2001

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10W 20/076
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: in via holes or…
H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…
H10W 20/081
Of dielectric parts thereof: by forming openings in the dielectric parts
H10W 20/42
Characterised by their conductive parts: vias, e.g. via plugs

Semiconductor device having improved metal line structure and manufacturing method therefor

Life of this patent

Semiconductor device having improved metal line structure and manufacturing method therefor

Life of this patent

Abstract

Claims28