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US 6,333,257 B1Granted
Interconnection structure and method for forming the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorNobuo Aoi
Life of this patent
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Abstract
An interconnection structure includes an interlevel insulating film, made of organic-containing silicon dioxide, between lower- and upper-level metal interconnects. A phenyl group, bonded to a silicon atom, is introduced into silicon dioxide in the organic-containing silicon dioxide.
Claims2
A method for forming an interconnection structure, comprising the steps of:
- a) forming a first insulating film mainly composed of organic-containing silicon oxide, in which silicon oxide contains an organic component, over lower-level metal interconnects;
- b) forming a second insulating film composed of an organic film over the first insulating film;
- c) after steps a) and b), forming wiring grooves and contact holes which communicate with the wiring grooves and expose the lower-level metal interconnects by selectively etching the second and first insulating films, respectively;
- and
- d) forming upper-level metal interconnects and contacts for interconnecting the lower- and upper-level metal interconnects together, by filling in the wiring grooves and the contact holes with a metal film.
2 more elements
Dependencies are inferred from the claim text.