Method of fabricating a semiconductor device
AssigneeNEC Corporation
InventorKoji Kishimoto
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device, includes the steps of (a) forming a first insulating film on a semiconductor substrate, (b) forming at least one recess at a surface of the first insulating film, (c) forming a first barrier layer covering a surface of the first insulating film and an inner surface of the recess therewith, (d) forming a copper layer over the first barrier layer such that the recess is entirely filled with the copper layer, (e) polishing the copper layer and the first barrier layer until the first insulating film appears, (f) exposing the copper layer to a plasma including at least one of carbon and hydrogen, (g) forming a second barrier layer on both the copper layer and the first insulating film, and (h) forming a second insulating film on the second barrier layer.
Claims19
A method of fabricating a semiconductor device:
- (a) forming a copper wiring layer on a barrier layer formed on an insulating film which is further formed on a semiconductor substrate;
- and
- (b) exposing said copper wiring layer to a plasma including at least one of carbon and hydrogen, to reduce a copper oxide formed on said copper wiring layer for converting said copper oxide into copper.
A method of fabricating a semiconductor device:
- (a) forming a first insulating film on a semiconductor substrate;
- (b) forming at least one recess at a surface of said first insulating film;
- (c) forming a first barrier layer covering a surface of said first insulating film and an inner surface of said recess therewith;
- (d) forming a copper layer over said first barrier layer such that said recess is entirely filled with said copper layer;
- (e) polishing said copper layer and said first barrier layer until said first insulating film appears;
- (f) exposing said copper layer to a plasma including at least one of carbon and hydrogen;
- (g) forming a second barrier layer on both said copper layer and said first insulating film;
- and
- (h) forming a second insulating film on said second barrier layer.
A method of fabricating a semiconductor device:
- (a) forming a first insulating film on a semiconductor substrate;
- (b) forming at least one recess at a surface of said first insulating film;
- (c) forming a first barrier layer covering a surface of said first insulating film and an inner surface of said recess therewith;
- (d) forming a copper damascene layer in said recess;
- (e) forming a second barrier layer on both said copper damascene layer and said first insulating film;
- and
- (f) forming a second insulating film on said second barrier layer;
- (g) forming a via-hole throughout both said second barrier layer and said second insulating film such that said via-hole reaches said copper damascene layer;
- (h) exposing a surface of said copper damascene layer to a plasma through said via-hole, said plasma including at least one of carbon and hydrogen;
- and
- (i) forming an electrically conductive layer in said via hole.
Dependencies are inferred from the claim text.