Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system
AssigneeKabushiki Kaisha Toshiba
InventorsMasaki Narita, Yukimasa Yoshida, Katsuaki Aoki, Hiroshi Fujita, Osamu Yamazaki, Toshimitsu Omine, Isao Matsui, Takashi O
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Abstract
A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.
Claims17
A semiconductor device manufacturing method comprising the steps of:
- (1) placing a substrate to be processed on a mono pole type electrostatic chuck on a substrate stand in a process chamber, applying a negative voltage with respect to the ground potential to the electrostatic chuck, and sticking the substrate onto the electrostatic chuck;
- and
- (2) performing predetermined processing on the substrate with the negative voltage applied to the electrostatic chuck.
A semiconductor device manufacturing method comprising the steps of:
- (1) placing a substrate to be processed on a mono pole type electrostatic chuck on a substrate stand in a process chamber, applying a negative voltage with respect to the ground potential to the electrostatic chuck, and sticking the substrate onto the electrostatic chuck;
- and
- (2) performing predetermined processing on the substrate by introducing a process gas into the process chamber or by generating discharge plasma in the process chamber while the negative voltage is being applied to the electrostatic chuck.
A semiconductor device manufacturing method comprising the steps of:
- (1) placing a substrate to be processed on a mono pole type electrostatic chuck on a substrate stand in a process chamber;
- (2) generating discharge plasma in the process chamber;
- (3) applying a positive voltage with respect to the ground potential to the electrostatic chuck, sticking the substrate to the electrostatic chuck after discharge plasma is generated;
- and
- (4) performing predetermined processing on the substrate using discharge plasma.
A semiconductor device manufacturing method comprising the steps of:
- (1) placing a substrate to be processed on a mono pole type electrostatic chuck on a substrate stand in a process chamber;
- (2) introducing a process gas into the process chamber, generating discharge plasma, and processing the substrate as predetermined;
- and
- (3) applying a negative voltage with respect to the ground potential to the electrostatic chuck, and at least terminating the generation of discharge plasma while the substrate is being stuck onto the electrostatic chuck.
A semiconductor device manufacturing method comprising the steps of:
- (1) placing a substrate to be processed on a mono pole type electrostatic chuck on a substrate stand in a process chamber;
- (2) introducing a process gas into the process chamber, generating discharge plasma, and processing the substrate as predetermined;
- (3) at least terminating the generation of discharge plasma;
- (4) applying a negative voltage with respect to the ground potential to the electrostatic chuck prior to the step (1) or prior to the step (3), and sticking the substrate onto the electrostatic chuck;
- and
- (5) removing the negative voltage from the electrostatic chuck after the step (3).
Dependencies are inferred from the claim text.