Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer

A method for forming a semiconductor device comprising the steps of:

• forming a doped germanium oxide sacrificial layer on a substrate, wherein the doped germanium oxide sacrificial layer is doped with one of a p+ and n+ dopant;
• providing an undoped polygermanium sacrificial layer on the substrate;
• doping the undoped polygermanium sacrificial layer with one of a p+ and n+ dopant;
• oxidizing the doped polygermanium sacrificial layer to form a doped germanium oxide sacrificial layer on the substrate;
• diffusing the dopant into the substrate;
• and
• removing the doped germanium oxide sacrificial layer.

A method for forming a semiconductor device comprising the steps of:

• forming a doped germanium oxide sacrificial layer on a substrate, wherein the doped germanium oxide sacrificial layer is doped with one of a p+ and n+ dopant;
• diffusing the dopant into the substrate;
• and
• removing the doped germanium oxide sacrificial layer by etching the doped germanium oxide sacrificial layer with water having a temperature of about 18° C. to about 100° C.

A method for forming a silicon semiconductor device comprising the steps of:

• providing a substrate;
• forming a germanium oxide sacrificial layer on the substrate;
• defining a first and second region in the germanium oxide sacrificial layer by forming a protective layer on the second region;
• doping the first region with one of a p+ and n+ dopant;
• removing the protective layer on the second region;
• forming a protective layer on the first region in the germanium oxide sacrificial layer;
• doping the second region with a second dopant wherein the second dopant is one of a p+ and n+ dopant, and wherein the second dopant is not the same type as the first dopant;
• removing the protective layer on the first region in the germanium oxide sacrificial layer;
• diffusing the first and second dopants into the substrate;
• and
• removing the doped germanium oxide sacrificial layer.

A method for forming a silicon semiconductor device comprising the steps of:

• providing a substrate;
• forming a first doped sacrificial layer of germanium oxide on the substrate wherein the first dopant is one of a p+ and n+ dopant;
• defining a first and second region in the doped germanium oxide sacrificial layer by forming a protective layer on the first region;
• removing the second region in the doped germanium oxide sacrificial layer and forming an exposed substrate under the second region;
• removing the protective layer on the first region in the doped germanium oxide sacrificial layer;
• forming a second doped sacrificial layer of germanium oxide over the first region and over the exposed substrate wherein the second doped sacrificial layer contains a second dopant and wherein the second dopant is a different type than the first dopant;
• diffusing the first and second dopants into the substrate;
• and
• removing the doped germanium oxide sacrificial layers.

A method for forming a silicon semiconductor device comprising the steps of:

• providing a substrate;
• forming a first doped sacrificial layer of germanium oxide on the substrate wherein the first dopant is one of a p+ and n+ dopant;
• defining a first and second region in the doped germanium oxide sacrificial layer by forming a protective layer on the first region;
• removing the second region in the doped germanium oxide sacrificial layer and forming an exposed substrate under the second region;
• removing the protective layer on the first region in the doped germanium oxide sacrificial layer;
• doping with one of a second dopant from the group of p+ and n+ dopants into the exposed substrate, wherein the second dopant is different than the first dopant;
• diffusing the first and second dopants into the substrate;
• and
• removing the doped germanium oxide sacrificial layer.

A method for forming a silicon semiconductor device comprising the steps of:

• providing a substrate;
• forming a polygermanium sacrificial layer on the substrate;
• defining a first and second region in the polygermanium sacrificial layer by forming a protective layer on the second region;
• doping the first region with one of a p+ and n+ dopant;
• removing the protective layer on the second region;
• forming a protective layer on the first region in the polygermanium sacrificial layer;
• doping second region with a second dopant wherein the second dopant is one of a p+ and n+ dopant, wherein the second dopant is not the same type as the first dopant;
• removing the protective layer on the first region in the polygermanium sacrificial layer;
• diffusing the first and second dopants into the substrate;
• oxidizing the polygermanium sacrificial layer to a germanium oxide sacrificial layer;
• and
• removing the germanium oxide sacrificial layer.