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AssigneeInternational Business Machines Corporation
InventorsToshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak
Estimating the term…
A viable T-gate FET is produced even when the cap of the “T” is mis-aligned from the stem of the “T”. A subtractive etch is used to selectively etch the material forming the cap of the T-gate and the material forming the stem of the T-gate in order to avoid the etching away of portions of the stem if the cap is mis-aligned relative to the stem. To that end, germanium (Ge) may be used as the material for the cap of the T-gate and poly silicon (polySi) may be used as the material for the stem of the T-gate. Since germanium can be etched selectively relative to silicon from 10:1 to as much as 20:1, the cap of the T can be formed without appreciable damage to the stem portion and thus without damage to the resultant FET device.
A method of forming a T-gate structure for a field effect transistor (FET), comprising the steps of:
In a method of forming a T-gate, the improvement comprising the steps of:
Dependencies are inferred from the claim text.