Method of etching contacts with reduced oxide stress
AssigneeAdvanced Micro Devices, Inc.
InventorsMinh Van Ngo, Jayendra Bhakta, Paul Besser
Life of this patent
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Abstract
A method for manufacturing a semiconductor device forms a trench of a trench isolation region in a portion of a top surface of a semiconductor substrates. Oxide is deposited as a trench liner in the trench using high temperature high density plasma (HDP) deposition. As the high temperature HDP oxide deposition is a stress neutral process, stress defects in an interface between the silicon substrate and the oxide layer are avoided, so that subsequent etching steps in a local interconnect process are less likely to overreach at the interface. This reduces the possibility of junction leakage when the local interconnect is formed.
Claims14
A method for manufacturing semiconductor devices, comprising the steps of:
- forming a trench of a trench isolation region on a portion of a top surface of a semiconductor substrate, the trench having an inner surface;
- and
- depositing a thermal liner on the inner surface of the trench by high density plasma (HDP) deposition;
- wherein the thermal liner is oxide;
- and
- further comprising maintaining a chamber temperature of approximately 500° C. to approximately 800° C. during the depositing of the thermal liner.
A method for manufacturing semiconductor devices, comprising the steps of:
- forming a trench of a trench isolation region on a portion of a top surface of a semiconductor substrate, the trench having an inner surface;
- and
- depositing a thermal liner on the inner surface of the trench by high density plasma (HDP) deposition;
- wherein the thermal liner is oxide;
- and
- further comprising maintaining a chamber temperature of approximately 600° C. to approximately 700° C. during the depositing of the thermal liner.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a trench of a trench isolation region in a portion of a top surface of a semiconductor substrate;
- depositing oxide as a trench liner in the trench using high density plasma (HDP) deposition;
- filling the trench with an insulating material to form a trench isolation region;
- forming an active region in the top surface adjacent to the oxide liner;
- depositing a dielectric layer over the top surface, active region and trench isolation region;
- etching the dielectric layer to form a local interconnection opening exposing the active region, wherein the trench liner deposited by HDP deposition substantially prevents the local interconnection opening from reaching the substrate between the active region and the trench isolation region;
- and
- filling the local interconnection opening with a conductive material.
Dependencies are inferred from the claim text.