Plasma CVD process

Abstract

In a plasma CVD system comprises a reactor the inside of which can be evacuated, a substrate holding means provided in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying to a plasma-producing high-frequency electrode a high-frequency power having an oscillation frequency in the range of from 30 MHz to 600 MHz, generated by a high-frequency power source, and an exhaust means for exhausting a gas remaining in the reactor after the reaction; the high-frequency power generated in the high-frequency power source being supplied to the plasma-producing high-frequency electrode to cause a plasma to take place across a substrate held by the substrate holding means and the plasma-producing high-frequency electrode to form a deposited film on the substrate; the phase of reflected power is adjusted on the plasma-producing high-frequency electrode at its part on the opposite side of the feeding point. High-quality deposited films having a very uniform film thickness and a homogeneous film quality can be formed at a high rate and stably on large-area substrates having any shapes, to obtain semiconductor devices in a good efficiency.

Dependencies are inferred from the claim text.