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US 6,333,066 B1Granted
Method for forming PZT thin film using seed layer
AssigneeSamsung Electronics Co., Ltd.
InventorDae-sig Kim
Life of this patent
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Abstract
A method for forming a PZT (lead zirconate titanate: Pb(ZrxTi1−x)O3) thin film using a seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO seed layer or a PZT seed layer of a perovskite phase formed by injecting excess Pb. The PbO seed layer or the PZT seed layer of a perovskite phase facilitates creation of perovskite PZT nuclei, thereby growing small and uniform PZT grains consisting of a perovskite phase.
Claims20
A method for forming a PZT thin film using a seed layer, comprising the steps of:
- forming an electrode on a substrate;
- forming a PbO seed layer on the electrode by injecting a Pb precursor into a chamber wherein oxygen source exists;
- and
- forming a PZT thin film on the PbO seed layer,
- wherein the PbO seed layer is formed to a thickness of 5-50 nm at a temperature of 420-480° C.
2 more elements
Dependencies are inferred from the claim text.