Method for fabricating silicon semiconductor discrete wafer
AssigneeNaoetsu Electronics Company
InventorsHisashi Ohshima, Tsutomu Satoh
Life of this patent
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Abstract
A method of fabricating a silicon semiconductor discrete wafer while dressing the grinding wheel is disclosed that assures excellent finishing accuracy and productivity. The dressing of the grinding wheel includes mixing air and grinding water from a surface grinding process including semiconductor chips lapped with abrasive grains having a count of at least #2000 and no more than #6000 and jetting the mixed air and grinding water as minute water drops back onto the surface of the grinding wheel during grinding of a wafer. Both cut surfaces are ground to a predetermined thickness with the dressed grinding wheel (via a surface grinding machine). The processing surface is wet-etched as the final processing.
Claims16
A method of dressing a grinding wheel surface for fabricating silicon semiconductor discrete wafers, the grinding wheel performing a grinding process, the method comprising:
- collecting grinding water including silicon semiconductor chips, during the grinding process of a silicon semiconductor wafer with a grinding wheel having a count of no less than #2000 and no greater than #6000;
- mixing air into the grinding water;
- and
- jetting the mixed water and air as a group of minute water drops to the grinding wheel surface during the grinding process to dress the grinding wheel surface.
An apparatus for dressing a surface of a grinding wheel, comprising:
- a pipe that provides grinding water including silicon semiconductor chips ground by a grinding wheel having a count of no less than #2000 and no greater than #6000 during a grinding process;
- an air introducing pipe that mixes air into said grinding water;
- and
- a nozzle that jets the mixed water and air as a group of minute water drops onto the grinding wheel surface during the grinding process to dress the grinding wheel surface.
Dependencies are inferred from the claim text.