Method of manufacturing an AlGaInP light emitting device using auto-doping
AssigneeRohm Co., Ltd.
InventorsYukio Matsumoto, Shunji Nakata, Yukio Shakuda
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Abstract
A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal−yAs (0.6≦y≦0.8) auto-doped in a carrier concentration of 5×1018-3×1019 cm−3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.
Claims2
A method of manufacturing a semiconductor light emitting device, comprising the steps of:
- (a) epitaxially growing an AlGaInP-based compound semiconductor layer on a semiconductor substrate by an MOCVD process to form a light emitting layer forming portion;
- and
- (b) epitaxially growing a p-type window layer of AlyGa1−yAs (0.6≦y≦0.8) to a carrier concentration of 5×1018-3×1019 cm−3 on a surface of said light emitting layer forming portion while controlling temperature by an MOCVD process without introducing a dopant gas.
Dependencies are inferred from the claim text.