Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates

A stress-engineered substrate, comprising:

• a first stress control layer having a first lattice constant and a first thermal expansion coefficient;
• a second stress control layer having a thermal expansion coefficient different from the first thermal expansion coefficient;
• a joining layer disposed between the first stress control layer and the second stress control layer, the joining layer having a softening temperature selected so as to decouple the first stress control layer from the second stress control layer above the softening temperature;
• and
• an epitaxial layer having a second lattice constant and a second thermal expansion coefficient and being disposed on the first stress control layer,
• wherein the thermal expansion coefficient of the second stress control layer is selected so that
• if the second lattice constant is greater than the first lattice constant and the second thermal expansion coefficient is greater than the first thermal expansion coefficient, then a composite thermal expansion coefficient of the stress-engineered substrate is greater than or equal to the thermal expansion coefficient of the epitaxial layer below the softening temperature, and
• if the second lattice constant is less than the first lattice constant and the second thermal expansion coefficient is less than the first thermal expansion coefficient, then a composite thermal expansion coefficient of the stress-engineered substrate is less than or equal to the thermal expansion coefficient of the epitaxial layer below the softening temperature.