Organic thin film transistor with enhanced carrier mobility
AssigneeMotorola, Inc.
InventorsSong Q. Shi, Chan-Long Shieh, Hsing-Chung Lee
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Abstract
An organic thin film transistor including a gate on a layer of gate insulator material, a source and a drain positioned in spaced apart relationship on a film of organic semiconductor material with uniaxially aligned molecules, the film of organic semiconductor material being positioned so that the molecules are aligned between the source and drain in a direction from the source to the drain, and an orientation film positioned adjacent the film of organic semiconductor material so that molecular uniaxial alignment of the film of organic semiconductor material is achieved by the orientation film.
Claims24
An organic thin film transistor comprising:
- a gate electrode positioned on a layer of gate insulator material;
- a source electrode and a drain electrode positioned in spaced apart relationship on a film of organic semiconductor material with uniaxially aligned molecules, the film of organic semiconductor material being positioned so that the uniaxially aligned molecules are aligned between the source and drain electrodes in a direction from the source to the drain electrodes, the layer of gate insulator material being operatively positioned adjacent to and in parallel with the film of organic semiconductor material;
- and
- an orientation film positioned adjacent the film of organic semiconductor material so that molecular uniaxial alignment of the film of organic semiconductor material is achieved by the orientation film positioned adjacent the film of organic semiconductor material.
An organic thin film transistor comprising:
- a gate electrode positioned on a layer of gate insulator material;
- a source electrode and a drain electrode positioned in spaced apart relationship on a film of organic semiconductor material with uniaxially aligned molecules, the film of organic semiconductor material being positioned so that the uniaxially aligned molecules are aligned between the source and drain electrodes in a direction from the source to the drain electrodes, the layer of gate insulator material being positioned in abutting engagement with the film of organic semiconductor material;
- and
- an orientation film positioned adjacent the film of organic semiconductor material so that molecular uniaxial alignment of the film of organic semiconductor material is achieved by the orientation film positioned adjacent the film of organic semiconductor material.
An organic thin film transistor comprising:
- a gate electrode positioned on a layer of gate insulator material;
- a source electrode and a drain electrode positioned in spaced apart relationship on a film of organic semiconductor material with uniaxially aligned molecules, the film of organic semiconductor material being positioned so that the uniaxially aligned molecules are aligned between the source and drain electrodes in a direction from the source to the drain electrodes;
- and
- an orientation film positioned with a first surface in abutting engagement with the film of organic semiconductor material and a second surface in abutting engagement with the layer of gate insulator material so that molecular uniaxial alignment of the film of organic semiconductor material is achieved by the orientation film.
Dependencies are inferred from the claim text.