Method for fabricating silicon oxynitride
AssigneeCorning Incorporated
InventorsDavid F. Dawson-Elli, Carlton M. Truesdale
Life of this patent
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Abstract
A method for making silicon oxynitride comprising providing a vaporous gas stream of a compound selected from the group consisting of silazanes and siloxazanes. An enclosed, heated reaction site is also provided. The vaporous gas stream is delivered to the enclosed, heated reaction site in which the levels of oxygen are strictly controlled to promote the formation of silicon oxynitride particles.
Claims22
A method of manufacturing silicon oxynitride comprising the steps of:
- providing a vaporous gas stream of a compound selected from the group comprising silazanes and siloxazanes;
- providing an enclosed reaction site heated to a temperature of at least about 500° C.;
- limiting the amount of oxygen present at the reaction site;
- and
- delivering the vaporous gas stream to the reaction site without ammonia to form silicon oxynitride containing greater than 0.1% nitrogen by weight.
A method of manufacturing silicon oxynitride comprising the steps of:
- providing a vaporous octamethylcyclotetrasilazane gas stream, including heating solid octamethylcyclotetrasilazane into liquid octamethylcyclotetrasilazane and bubbling an inert carrier gas through the octamethylcyclotetrasilazane liquid;
- providing an enclosed reaction site heated to a temperature of at least about 500° C.;
- limiting the amount of oxygen present at the reaction site;
- and
- delivering the vaporous octamethylcyclotetrasilazane gas stream to the reaction site to form silicon oxynitride containing greater than 0.1% nitrogen by weight.
A method of manufacturing silicon oxynitride comprising the steps of:
- providing a vaporous gas stream of a compound selected from the group comprising silazanes and siloxazanes;
- providing an enclosed reaction site heated to a temperature of at least about 500° C.;
- limiting the amount of oxygen present at the reaction site;
- and
- delivering the vaporous gas stream to the reaction site to form silicon oxynitride containing greater than 0.1% nitrogen by weight, wherein no ammonia is present at the reaction site.
A method of manufacturing silicon oxynitride comprising the steps of:
- providing an octamethylcyclotetrasilazane gas stream;
- providing an enclosed reaction site heated to a temperature of at least about 500° C.;
- limiting the amount of oxygen present at the reaction site;
- and
- delivering the octamethylcyclotetrasilazane gas stream to the reaction site to form silicon oxynitride containing greater than 0.1% nitrogen by weight.
Dependencies are inferred from the claim text.