Method for crystallizing amorphous silicon layer

A method for crystallizing an amorphous silicon layer, the method comprising the steps of:

• preparing an amorphous silicon layer to be crystallized on a substrate;
• preparing a plurality of the laser beams arrayed predetermined distance between the laser beam to the laser beam, each the laser beam having a continuous chevron-shapes with rounded apexes;
• first-irradiating a plurality of the selected portions of the amorphous silicon layer with the laser beams at an energy density sufficient to induce substantially complete melting to form a melted region and an unmelted region;
• solidifying the melted region of the amorphous silicon layer with a lateral grain growth from the unmelted region to the melted region;
• translating the amorphous layer relative to the beam image over a first distance to a second direction;
• and
• second-irradiating a plurality of the selected portions of the amorphous silicon layer with the laser beams at an energy density sufficient to induce complete melting and crystallizing the irradiated portions of the amorphous silicon layer.

A method for crystallizing an amorphous silicon layer disposed on a substrate, the method comprising the steps of:

• irradiating the amorphous silicon layer with an energy source at an energy density sufficient to induce substantially complete melting to form a melted region and an unmelted region, wherein the energy source has a first pattern comprising a plurality of slits arranged adjacent to each other and separated by a predetermined distance at a first direction;
• solidifying the melted region of the amorphous silicon layer with a lateral grain growth from the unmelted region to the melted region;
• translating the amorphous silicon layer relative to the energy source over a first distance, wherein the translation of the energy source overlaps the melted region of the amorphous silicon layer;
• and
• irradiating the amorphous silicon layer with the laser beams at an energy density sufficient to induce complete melting and crystallizing the irradiated portions of the amorphous silicon layer.