US 6,324,092 B1Granted

Random access memory cell

AssigneeMacronix International Co., Ltd.

InventorsFuh-cheng Jong, Ming-Hung chou, Kent Kuohua Chang

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Abstract

A random access memory cell. The RAM cell includes a first transistor and a second transistor. A control gate of the first transistor is coupled to a control signal line. A data read terminal of the first transistor is coupled to a data read line. An earth terminal of the first transistor is connected to a ground. A floating gate terminal of the first transistor is located between a portion of a substrate and a portion of the control gate. A control gate of the second transistor is also coupled to the control signal line. The data write terminal of the second transistor is a data write line. A data transmission terminal of the second transistor is coupled to the floating gate of the first transistor. To write data into the RAM cell, a write control voltage is applied to the control signal line. Similarly, to read data from the RAM cell, a read control voltage is applied to the control signal line. The write control voltage is greater than the read control voltage.

Claims7

Dependent claims

A random access memory cell, comprising:

a first transistor having a first control gate, a floating gate, a first substrate, a data read terminal and an earth terminal, wherein the first transistor is switched on when a voltage greater than a first threshold voltage is applied, the first control gate is connected to a control signal line, the data read terminal is connected to a data read line, the earth terminal is connected to a ground, the floating gate is located between a portion of the first substrate and a portion of the first control gate;
and
a second transistor having a second control gate, a second substrate, a data write terminal and a data transmission terminal, wherein the second transistor is switched on when a voltage greater than a second threshold voltage is applied, the second control gate is connected to the control signal line, the data write terminal is connected to a data write line and the data transmission terminal is connected to the floating gate;
wherein the second threshold voltage is greater than the first threshold voltage, the control signal line needs to provide a write control voltage to write data into the memory cell and a read control voltage to read data out of the memory cell, the write control voltage is greater than or equal to the second threshold voltage while the read control voltage is smaller than the second threshold voltage but greater than or equal to the first threshold voltage.

1 more element

Dependencies are inferred from the claim text.