Nonvolatile ferroelectric memory device

Abstract

A nonvolatile ferroelectric memory device is provided that has a plurality of cell arrays in a matrix and includes a plurality of pull-down sensing amplifiers between adjacent cell arrays arranged in a vertical direction that pull-down amplify a data in a corresponding cell array and a pull-up amplifier. The pull-up amplifier between the vertically adjacent cell arrays is shared by an upper and a lower cell arrays to selectively pull-up amplify a data in the upper cell array or data in the lower cell array. The nonvolatile ferroelectric memory device having the plurality of vertically arranged cell arrays efficiently reduces a layout and ensures a stability of amplification by dividing a structure of a sensing amplifier formed between cell arrays into the pull-down sensing amplifiers and the pull-up sensing amplifier, and subsequently making the pull-up sensing amplifier shared by the upper cell array and the lower cell array.

Dependencies are inferred from the claim text.