Non-volatile memory device
AssigneeHitachi, Ltd.
InventorsTetsuya Tsujikawa, Atsushi Nozoe, Michitaro Kanamitsu, Shoji Kubono, Eiji Yamamoto, Ken Matsubara
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Abstract
A non-volatile memory device having a plurality of memory cells and a control circuit. The control circuit receives operation commands from outside the device and controls the operation of the device according to the commands. The commands include read commands and write commands. In the read command the control circuit reads data in the memory cells and outputs it. In a write command the control circuit controls the inputting of data to data latch circuits and then to memory cells. The control circuit provides status information indicating whether the writing of data is a success or a failure.
Claims11
A nonvolatile memory device comprising:
- a plurality of memory cells;
- a plurality of data latch circuits;
- a control circuit;
- and
- a plurality of input/output terminals;
- wherein said control circuit receives a plurality of operation commands from outside said nonvolatile memory device and controls operations according to each operation command, said operation commands comprising a first read command, a first write command and a second write command,
- wherein in an operation of said first read command, said nonvolatile memory device receives said first read command and a first address information, said control circuit controls reading out data stored in memory cells corresponding to said address information and outputting said reading out data to outside via said plurality of input/output terminals,
- wherein in an operation of said first write command, said nonvolatile memory device receives said first write command, a first address information and write data, said control circuit controls setting said write data to said plurality of data latch circuits and storing said write data in said data latch circuits to ones of memory cells corresponding to said first address information, and
- wherein in an operation of said second write command, said nonvolatile memory device receives said second write command and a second address information different from said first address information, said control circuit controls storing said write data in said data latch circuits to memory cells corresponding to said second address information.
A nonvolatile memory system comprising:
- a control device;
- and
- a plurality of nonvolatile memory devices;
- wherein said control device supplies a plurality of commands to said nonvolatile memory devices, said commands comprising a first read command, a first write command, a second write command,
- wherein each of said nonvolatile memory devices comprises a plurality of memory cells for storing data and a plurality of data latches for temporarily storing write data from outside of the memory device
- wherein in said first read command, said control device is supplied with read out data stored in said memory cells from said nonvolatile memory device,
- wherein in said first write command, said control device supplies at least a first address information and said write data for storing in said nonvolatile memory device, and said nonvolatile memory device stores said write data to said data latches temporarily, stores said write data in said data latches to memory cells corresponding to said first address information and supplies a result information to said control device whether the data storing is a success or failure, and
- wherein in said second write command, said control device supplies a second address information, and said nonvolatile memory device stores said write data in said data latches to memory cells corresponding to said second address information, when said control device is supplied with said result information indicating the data storing is a failure.
Dependencies are inferred from the claim text.