Nonvolatile ferroelectric memory device and circuit for driving the same

A driving circuit for a nonvolatile ferroelectric memory device, comprising:

• a main wordline driver that outputs first and second control signals;
• a local decoder that outputs a plurality of driving signals;
• and
• first and second local wordline drivers to drive a selected split wordline pair of a plurality of split wordline pairs of corresponding cell array, wherein each local wordline driver comprises,
• a plurality of first switches that switch a corresponding one of the control signals of the main wordline driver;
• a plurality of second switches that each switch a corresponding one of the plurality of driving signals;
• a plurality of pull-down switches each coupled to a corresponding one of the first and second switches and a split wordline, wherein the local wordline drivers drives the selected split wordline pair responsive to the control signals and driving signals.

A nonvolatile ferroelectric memory device, comprising:

• a first memory array and a second memory array each having a plurality of cell arrays;
• a first local wordline driver that selectively provides a driving signal for cells in the first memory array;
• a second local wordline driver that selectively provides the driving signal for cells in the second memory array;
• a main wordline driver that provides a control signal to enable one of the first local wordline driver unit and the second local wordline driver;
• and
• a local decoder that provides the driving signal to the first and second local wordline drivers for selected cells in the first and second memory arrays, wherein the main wordline driver activates at least one of a plurality of wordline drivers constituting the first and second local wordline drivers, wherein each of the wordline drivers provide the driving signal to a plurality of split wordline pairs that extend along one direction to cross a cell array.